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* TITLE Impurity doping effect in MgB2: Scientific and Technological Issues
* SPEAKERS
Name Affiliation E-mail
Prof. Yong-Jihn Kim Univ. of Puerto Rico, USA sec(at)apctp.org
* HOST(Applicant)
Name Affiliation E-mail
-
* DATE / TIME 2009-07-08, 4:00 ~ 5:00 pm
* PLACE Science Bldg., 3-201
* ABSTRACT
MgB2 is a unique BCS type High Tc superconductor. Although its superconductivity is due to the strong electron-phonon interaction, our understanding is not detailed enough to find similar high Tc materials. From a technological point of view MgB2 wires can be used for MRI magnets and electricity transmission.

Impurity doping can provide important information on the superconducting mechanism and enhance the high field properties of MgB2 wires for technological applications. First, we explain the disorder induced evolution of two energy gaps in MgB2 using the two band model and the scattered states. Second, we show that special class of impurities can enhance the high field properties of MgB2 significantly for MRI magnet applications and for power transmission [Y-.J. Kim, US patent application number, 20090033330].
 
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