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* TITLE Phase Structure of the Topological Anderson Insulator
* SPEAKERS
Name Affiliation E-mail
Vincent Sacksteder
* HOST(Applicant)
Name Affiliation E-mail
Ki Seok Kim APCTP kimks(at)apctp.org
* DATE / TIME 2012-02-17, 10:30AM
* PLACE 512 Seminar room, APCTP Headquarters
* ABSTRACT
We study the disordered topological anderson insulator in a 2-D (square
not strip) geometry. We first report the phase diagram of finite
systems and then study the evolution of phase boundaries when the
system size is increased. We establish that conductance quantization
can occur without a bulk band gap, and that there are two phases with
quantized conductance: TAI-I with a bulk band gap, and TAI-II with
localized bulk states. Effective medium theory (CPA, SCBA)
predicts well the boundaries and interior of the gapped TAI-I phase,
but fails to predict all boundaries save one of the ungapped TAI-II
phase. Even in large $1120 times 1120$ samples there are direct
transitions from bulk conduction into both the gapped TAI-I and the
ungapped TAI-II phases without an intervening insulating phase. The
TAI-II transition manifests scale invariance while the remarkably stable
TAI-I transition does not. There is no metallic phase at the
transition between quantized and insulating phases. Centered near this
transition there are very broad peaks in the eigenstate size and fractal
dimension $d_2$; in a large portion of the conductance plateau
eigenstates grow when the disorder strength is increased. The fractal
dimension at the peak maximum is $d_2 approx 1.5$. We report
conductance distributions near several phase transitions and compare
them with critical conductance distributions for well-known models.

 
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